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SemiQ
GCMX003A120S3B1-N
1200V, 3M SIC MOSFET HALF BRIDGE
● ActiveRoHS: ROHS3 Compliant
In StockROHS3 CompliantActive
CategoryFET, MOSFET Arrays
ECCNEAR99
Lead Time22 Weeks
Specifications
ManufacturerSemiQ
SeriesQSiC™
PackagingBox
Part StatusActive
TechnologySilicon Carbide (SiC)
Configuration2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C625A (Tc)
Rds On (Max) @ Id, Vgs5.5mOhm @ 300A, 20V
Vgs(th) (Max) @ Id4V @ 120mA
Gate Charge (Qg) (Max) @ Vgs1408nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds41400pF @ 800V
Datasheets
GCMX003A120S3B1-N DatasheetPDFView¥238.7300
15 pcs in stock
Supplier Offers (1)
DigiKeyBAuthorized
¥238.7300
Volume Pricing
1+¥238.7300
15+¥229.9500
Compliance & Regulatory
RoHS
ROHS3 Compliant
ECCN
EAR99
Lead Time
22 Weeks
Traceability
Full manufacturer traceability
Genuine Guarantee
Authorized distribution channels
Packaging
Original factory sealed