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SemiQ
GCMX010A120B3B1P
MOSFET 2N-CH 1200V 173A
● ActiveRoHS: ROHS3 Compliant
In StockROHS3 CompliantActive
CategoryFET, MOSFET Arrays
ECCNEAR99
Lead Time22 Weeks
Specifications
ManufacturerSemiQ
PackagingTray
Part StatusActive
TechnologySilicon Carbide (SiC)
Configuration2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C173A (Tc)
Rds On (Max) @ Id, Vgs14mOhm @ 100A, 20V
Vgs(th) (Max) @ Id4V @ 40mA
Gate Charge (Qg) (Max) @ Vgs483nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds13800pF @ 800V
Power - Max577W (Tc)
Datasheets
GCMX010A120B3B1P DatasheetPDFView¥101.2700
9 pcs in stock
Supplier Offers (1)
DigiKeyBAuthorized
¥101.2700
Compliance & Regulatory
RoHS
ROHS3 Compliant
ECCN
EAR99
Lead Time
22 Weeks
Traceability
Full manufacturer traceability
Genuine Guarantee
Authorized distribution channels
Packaging
Original factory sealed