正品保障
可追溯
担保交易
GaNPower
GPIHV10DK
GaNFET N-CH 1200V 10A TO252
● ActiveRoHS: ROHS3 Compliant
可订购ROHS3 Compliant量产中
分类Single FETs, MOSFETs
ECCN3A001
规格参数
MfrGaNPower
PackagingTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C10A
Drive Voltage (Max Rds On, Min Rds On)6V
Vgs(th) (Max) @ Id1.7V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs3.5 nC @ 6 V
Vgs (Max)+7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds105 pF @ 700 V
询价
合规与法规信息
RoHS
ROHS3 Compliant
ECCN
3A001
可追溯性
完整原厂追溯
正品保障
授权分销渠道
包装
原厂密封包装