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GaNPower
GPIHV10DK
GaNFET N-CH 1200V 10A TO252
● ActiveRoHS: ROHS3 Compliant
On OrderROHS3 CompliantActive
CategorySingle FETs, MOSFETs
ECCN3A001
Specifications
MfrGaNPower
PackagingTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C10A
Drive Voltage (Max Rds On, Min Rds On)6V
Vgs(th) (Max) @ Id1.7V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs3.5 nC @ 6 V
Vgs (Max)+7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds105 pF @ 700 V
Datasheets
GPIHV10DK DatasheetPDFViewRequest Quote
Compliance & Regulatory
RoHS
ROHS3 Compliant
ECCN
3A001
Traceability
Full manufacturer traceability
Genuine Guarantee
Authorized distribution channels
Packaging
Original factory sealed