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IV1Q12160T3
SIC MOSFET, 1200V 160MOHM, TO247
● ActiveRoHS: ROHS3 Compliant
On OrderROHS3 CompliantActive
CategorySingle FETs, MOSFETs
ECCNEAR99
Lead Time15 Weeks
Specifications
MfrInventchip
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs195mOhm @ 10A, 20V
Vgs(th) (Max) @ Id5V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs43 nC @ 20 V
Vgs (Max)+20V, -5V
Datasheets
IV1Q12160T3 DatasheetPDFView¥3.4174
Supplier Offers (1)
DigiKeyBAuthorized
¥3.4174
Compliance & Regulatory
RoHS
ROHS3 Compliant
ECCN
EAR99
Lead Time
15 Weeks
Traceability
Full manufacturer traceability
Genuine Guarantee
Authorized distribution channels
Packaging
Original factory sealed