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Infineon Technologies Americas Corp.
IMCQ120R005M2HXUMA1
SICFET N-CH 1200V 342A 22PWRBSOP
● ActiveRoHS: ROHS3 Compliant
In StockROHS3 CompliantActive
CategorySingle FETs, MOSFETs
ECCNEAR99
Lead Time26 Weeks
Specifications
MfrInfineon Technologies Americas Corp.
SeriesCoolSiC™ G2
PackagingTape & Reel (TR) || Cut Tape (CT) || Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C342A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Rds On (Max) @ Id, Vgs5mOhm @ 138.2A, 18V
Vgs(th) (Max) @ Id5.1V @ 43.4mA
Gate Charge (Qg) (Max) @ Vgs261 nC @ 18 V
Datasheets
IMCQ120R005M2HXUMA1 DatasheetPDFView¥45.3900
720 pcs in stock
Supplier Offers (1)
DigiKeyBAuthorized
¥45.3900
Volume Pricing
1+¥45.3900
10+¥38.7400
Compliance & Regulatory
RoHS
ROHS3 Compliant
ECCN
EAR99
Lead Time
26 Weeks
Traceability
Full manufacturer traceability
Genuine Guarantee
Authorized distribution channels
Packaging
Original factory sealed