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SemiQ
GCMS007C120S1-E1
GEN3 1200V 7M SIC MOSFET & SBD
● ActiveRoHS: ROHS3 Compliant
On OrderROHS3 CompliantActive
CategorySingle FETs, MOSFETs
ECCNEAR99
Lead Time6 Weeks
Specifications
MfrSemiQ
SeriesQSiC™
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C189A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs11mOhm @ 100A, 18V
Vgs(th) (Max) @ Id4V @ 40mA
Gate Charge (Qg) (Max) @ Vgs505 nC @ 18 V
Datasheets
GCMS007C120S1-E1 DatasheetPDFView¥41.1400
Supplier Offers (1)
DigiKeyBAuthorized
¥41.1400
Volume Pricing
1+¥41.1400
10+¥30.7510
100+¥28.0250
Compliance & Regulatory
RoHS
ROHS3 Compliant
ECCN
EAR99
Lead Time
6 Weeks
Traceability
Full manufacturer traceability
Genuine Guarantee
Authorized distribution channels
Packaging
Original factory sealed