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SemiQ
GCMX080C120S1-E1
GEN3 1200V 80M SIC MOSFET MODULE
● ActiveRoHS: ROHS3 Compliant
In StockROHS3 CompliantActive
CategorySingle FETs, MOSFETs
ECCNEAR99
Lead Time22 Weeks
Specifications
MfrSemiQ
SeriesQSiC™
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs100mOhm @ 10A, 18V
Vgs(th) (Max) @ Id4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs57 nC @ 18 V
Datasheets
GCMX080C120S1-E1 DatasheetPDFView¥21.3600
30 pcs in stock
Supplier Offers (1)
DigiKeyBAuthorized
¥21.3600
Volume Pricing
1+¥21.3600
10+¥15.3550
100+¥12.2875
Compliance & Regulatory
RoHS
ROHS3 Compliant
ECCN
EAR99
Lead Time
22 Weeks
Traceability
Full manufacturer traceability
Genuine Guarantee
Authorized distribution channels
Packaging
Original factory sealed