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SemiQ
GCMS016C120S1-E1
GEN3 1200V 16M SIC MOSFET & SBD
● ActiveRoHS: ROHS3 Compliant
In StockROHS3 CompliantActive
CategorySingle FETs, MOSFETs
ECCNEAR99
Lead Time22 Weeks
Specifications
MfrSemiQ
SeriesQSiC™
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C103A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs23mOhm @ 50A, 18V
Vgs(th) (Max) @ Id4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs249 nC @ 18 V
Datasheets
GCMS016C120S1-E1 DatasheetPDFView¥32.1700
30 pcs in stock
Supplier Offers (1)
DigiKeyBAuthorized
¥32.1700
Volume Pricing
1+¥32.1700
10+¥23.6990
100+¥20.6250
Compliance & Regulatory
RoHS
ROHS3 Compliant
ECCN
EAR99
Lead Time
22 Weeks
Traceability
Full manufacturer traceability
Genuine Guarantee
Authorized distribution channels
Packaging
Original factory sealed