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GaNPower
GPI65007DF56
GaNFET N-CH 650V 7A DFN5x6
● ActiveRoHS: ROHS3 Compliant
In StockROHS3 CompliantActive
CategorySingle FETs, MOSFETs
ECCN3A001
Specifications
MfrGaNPower
PackagingTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C7A
Drive Voltage (Max Rds On, Min Rds On)6V
Vgs(th) (Max) @ Id1.5V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs2.1 nC @ 6 V
Vgs (Max)+7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds76.1 pF @ 400 V
Datasheets
GPI65007DF56 DatasheetPDFView¥3.5000
35 pcs in stock
Supplier Offers (1)
DigiKeyBAuthorized
¥3.5000
Compliance & Regulatory
RoHS
ROHS3 Compliant
ECCN
3A001
Traceability
Full manufacturer traceability
Genuine Guarantee
Authorized distribution channels
Packaging
Original factory sealed