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IV2Q06060T4Z
GEN 2, SIC MOSFET, 650V 60MOHM,
● ActiveRoHS: ROHS3 Compliant
In StockROHS3 CompliantActive
CategorySingle FETs, MOSFETs
ECCNEAR99
Lead Time15 Weeks
Specifications
MfrInventchip
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs53mOhm @ 15A, 18V
Vgs(th) (Max) @ Id4.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs64 nC @ 18 V
Vgs (Max)+20V, -5V
Datasheets
IV2Q06060T4Z DatasheetPDFView¥8.9900
50 pcs in stock
Supplier Offers (1)
DigiKeyBAuthorized
¥8.9900
Volume Pricing
1+¥8.9900
10+¥6.1520
100+¥4.5464
500+¥4.0000
Compliance & Regulatory
RoHS
ROHS3 Compliant
ECCN
EAR99
Lead Time
15 Weeks
Traceability
Full manufacturer traceability
Genuine Guarantee
Authorized distribution channels
Packaging
Original factory sealed