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NoMIS Power
NH3T008MP120F2
1200 V, 8 m SiC Half-Bridge Powe
● ActiveRoHS: ROHS3 Compliant
In StockROHS3 CompliantActive
CategoryFET, MOSFET Arrays
ECCNEAR99
Specifications
ManufacturerNoMIS Power
Series1200
PackagingTray
Part StatusActive
TechnologySilicon Carbide (SiC)
Configuration2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Vgs(th) (Max) @ Id4V @ 100mA
Gate Charge (Qg) (Max) @ Vgs530nC @ 20V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Datasheets
NH3T008MP120F2 DatasheetPDFView¥149.0000
6 pcs in stock
Supplier Offers (1)
DigiKeyBAuthorized
¥149.0000
Compliance & Regulatory
RoHS
ROHS3 Compliant
ECCN
EAR99
Traceability
Full manufacturer traceability
Genuine Guarantee
Authorized distribution channels
Packaging
Original factory sealed